中英
1
structure of thin film中文是什么意思
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- 中文翻译
- 造句
- 薄膜结构
- structure n. 1.构造，结构；组织；石理，石纹。 2.建造物。 ...
- thin adj. (thinner; thinnest) 1.薄 ...
- film n. 1.薄层，薄膜；薄雾，轻烟；细丝状的东西。 2.【 ...
- thin film composite structure 薄膜合成结构
- thin film structure 薄膜结构
- thin film 薄膜工艺
- thin film; film; diaphragm 薄膜
- film structure 电影结构
- adhesion of thin film 薄膜的附着力
- adrasion resistance of thin film 薄膜的抗磨强度
- agitated thin-film evaporator 搅拌薄膜蒸发器
- capacitor, thin-film 薄膜电容器
- ceramic thin film 陶瓷薄膜
- circuit fabrication thin-film 薄模电路制造
- compatible thin-film circuit 相容薄膜电路
- cvd superconducting thin film cvd超导薄膜
- discrete thin film component 分立薄膜元件
- discrete thin-film component 分立薄膜元件
- discrete thin-film componetn 个别薄膜成份
- disordered thin film 无序薄膜
- distributed thin film waveguide 分布薄膜波导
- distributed thin-film waveguide 分布薄膜波导
- equivalent index of thin film 薄膜等效折射率
- ferroelectric thin film 铁电薄膜强诱电体薄膜
- ferromagnetic thin film 铁磁薄膜
- It was found that the concentration of tea and ammonia is very important for the sns thin film quality . xrd and sem were employed to study the structure of thin films
分析结果表明：反应物三乙醇胺的浓度、溶液的ph值对反应有很重要的影响，氯化铵的加入对溶液ph值有稳定作用。 - Based on laser molecular beam epitaxy , the strain behavior and the corresponding control technology in oxides heteroepitaxial system , especially in ferroelectric thin films with perovskite structure , was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ) . some original and meaningful results were obtained . following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本论文基于激光分子束外延的基本原理,以高能电子反射为主要监测工具,对氧化物薄膜特别是铁电氧化物薄膜异质外延过程中应变行为及其控制方法进行了系统的研究,并取得了一系列有意义的结果,主要包括以下内容:利用反射高能电子衍射( rheed )的信息对薄膜结构进行分析。 - Based on the analysis of relationship between the deposition rate and the deposition conditions ( the main factor : substrate tenperature , teos temperature and deposition time ) , it is proved that the maximum deposition rate and the optimum surface state , structure of thin films are to be gotten , when the temperature of substrate is 500 to 600 c , the pressure of the reactor is 260 to 400 pa , the temperature of teos is about 60 c , current is 1ml . s - 1
在成膜机理的基础上，通过对不同沉积条件(如沉积温度，物源温度，沉积时间)下沉积速率和薄膜结构形态的测试和分析，我们发现，当系统的实验条件为：基片温度500 ? 600 ，反应室压力260 ? 400pa ， teos的温度在60左右，流量1ml s ~ ( - 1 )时将获得最佳沉积速率和膜的最佳结构形态。
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